Senior / Staff Engineer - GaN Metrology

2 weeks ago

Central Region, Singapore Infineon Technologies Full time $104,000 - $130,878 per year

#WeAreIn for driving decarbonization and digitalization.

As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.

Are you in?

We are on a journey to create the best Infineon for everyone.This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant´s experience and skills. Learn more about our various contact channels.

Please let your recruiter know if they need to pay special attention to something in order to enable your participation in the interview process.

Click here for more information about Diversity & Inclusion at Infineon.

Job Description

In your new role you will:

  • Development and optimisation of metrology techniques for GaN on Si &GaN on Sapphire material systems
  • Performing assessments and tool matching to ensure measurement accuracy and consistency across different tools.
  • Researching and developing new metrology methods and technologies to improve defect detection capabilities and overall process throughput.
  • Analysing and interpreting metrology data to identify trends, correlate with epi growth & wafer fabrication parameters, and pinpoint potential manufacturing issues.
  • Engage with metrology equipment vendors to improve and optimise metrology standards and recipes

Your Profile

You are best equipped for this task if you have:

  • Ph.D in Material Science (or) Masters in Material Science / Chemistry/ Solid State Physics with 3+ years of Industry experience (or) Undergraduate degree with 5+ years of Industry experience with focus on III-V Hetero-epitaxy MOCVD material characterisation
  • Hands-on metrology experience (AFM/TEM/XRD/P/Ellipsometry/FTIR) with AlGaN/GaN HEMTs systems on Silicon and Sapphire Substrates (critical requirement)
  • Good understanding of MOCVD based III-V Hetero-epitaxy processes and their impact on material characterisation
  • Expertise in data organisation/data analysis
  • Good communication skills and ability to work with cross-functional teams in a global R&D organisation

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