Principal Scientist

Overview ROLE: A*STAR-IME is leading the way in establishing the industry’s first 200 mm open Silicon Carbide (SiC) R&D program. The program’s specific focus is on advancing 200 mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2 kV. Developing key innovative processes is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involves growing leadership in ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking an individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, and having a strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing ion implantation expertise on compound semiconductor materials and collaborating with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future. Responsibilities Diagnose malfunctions by utilizing appropriate diagnostic tools and software to identify and rectify equipment faults, applying knowledge of ion implant system functionality. Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop processes to achieve the desired dopant profile with excellent damage recovery. Collaborate with vendors to optimize equipment performance and reduce tool downtime. Analyze data related to implant-related defect formation to quantify impact and develop effective minimization strategies. Examine work orders and communicate with equipment operators to resolve equipment problems & determine mechanical or human factors contributing to the issues. Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems. Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels. Requirements M.Sc./Ph.D. Degree in Electrical Engineering or related field. >5 years industrial experience in semiconductor device process development or high-energy ion implantation applications. Extensive proficiency in medium- to high-energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and troubleshooting techniques to minimize equipment downtime. Good understanding of wide-bandgap semiconductor materials and their corresponding dopant species. Expertise in ion channeling, ion bombardment, and their impact on implant species profiles. In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors. Familiarity with essential device properties resulting from ion implantation. Adept at mentoring and transferring knowledge to junior staff members. #J-18808-Ljbffr