NAND Device Engineering Leader for Cutting-Edge Technology
12 hours ago
In this pivotal role as Principal NAND Device Engineering Lead or Manager at Micron Technology Inc., you will spearhead the development of next-generation NAND technologies. As a senior leader, you will be responsible for driving innovation and excellence in array development, collaborating with cross-functional teams to deliver cutting-edge solutions within project timelines.
Key Responsibilities:- Contribute to the advancement of state-of-the-art NAND cell technology, leveraging expertise in NAND Cell device physics and NAND memory array operation to drive innovation.
- Develop novel trim and waveform/algo innovations to enhance Vt placement, performance, and reliability, applying first-principles device knowledge to create pioneering array solutions.
- Pursue electrical characterization of NAND cell arrays and test structures to identify improvement directions at both component and system levels.
- Collaborate with Process Integration and Design teams to contribute to cell improvement efforts (performance, reliability) through feedback and expertise.
- Foster strong partnerships with design, product, system, and probe engineers to drive success.
- Masters degree in Electrical engineering with focus on Semiconductor devices
- Demonstrated expertise in nonvolatile memories, specifically NAND device physics, and experience in NAND cell trim and algo development (preferably over 5 years)
- Excellent communication and reporting skills
- Proven ability to drive results in fast-paced environments
This is an exceptional chance to be at the forefront of developing groundbreaking NAND technologies and products that shape the world of information storage.
Estimated Annual Salary: $120,000 - $180,000
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