Power Electronics TCAD Device Design Scientist, SiC,IME
6 days ago
- TCAD modeling, simulation, and innovative design of highpower electronics devices, as well as devicecharacterization.
- Develop and simulate highpower SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT)with a blocking voltage exceeding 1.2K using the industry-standardSynopsys/Silvaco simulator.
- Create andsimulate practical & efficient junctionterminations.
- Model transport and carrierscattering in devices operating under extreme ambientconditions.
- Serve as a valuable resource forcolleagues with lesser TCAD power electronics experience and takelead in group projects with managing risks & resourcerequirements.
- Foster close collaborations withboth internal and external customers to fully understand customerissues and requirements.
JobRequirements:
- PhD Degree inElectrical Engineering or related field.
- >2-3 years industrial experience for high powerdevices design and modeling.
- Thoroughunderstanding of different types of high-voltage, high-powerMOSFETs including Planar, Trench, Super-Junction MOSFETs, andIGBTs, with a focus on design and devicecharacterizations.
- Hands-on skill in designingMOSFET/diode layouts.
- Excellent communicationskills to effectively engage with customers, address their needs,resolve issues, and meet demands.
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