Power Electronics TCAD Device Design Scientist, SiC,IME

6 days ago


Singapore A*star Research Entities Full time
Roles and Responsibilities:
  • TCAD modeling, simulation, and innovative design of highpower electronics devices, as well as devicecharacterization.
  • Develop and simulate highpower SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT)with a blocking voltage exceeding 1.2K using the industry-standardSynopsys/Silvaco simulator.
  • Create andsimulate practical & efficient junctionterminations.
  • Model transport and carrierscattering in devices operating under extreme ambientconditions.
  • Serve as a valuable resource forcolleagues with lesser TCAD power electronics experience and takelead in group projects with managing risks & resourcerequirements.
  • Foster close collaborations withboth internal and external customers to fully understand customerissues and requirements.

JobRequirements:
  • PhD Degree inElectrical Engineering or related field.
  • >2-3 years industrial experience for high powerdevices design and modeling.
  • Thoroughunderstanding of different types of high-voltage, high-powerMOSFETs including Planar, Trench, Super-Junction MOSFETs, andIGBTs, with a focus on design and devicecharacterizations.
  • Hands-on skill in designingMOSFET/diode layouts.
  • Excellent communicationskills to effectively engage with customers, address their needs,resolve issues, and meet demands.

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