Engineer/Sr Engineer, NAND PI
4 weeks ago
Our vision is to transform how the world uses information to enrich life for all.
Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing.
JR42779 Engineer/Sr Engineer, NAND PI (Evergreen)Your responsibilities will include, but are not limited to, the following:
Identify, quantify key CMOS/interconnect module deficiencies/technology gaps and drive cross-functional teams to optimize existing process flows, conceptualize, and develop new innovative solutions to meet product requirements and manufacturability. Measure and control CMOS/interconnect electrical and reliability test parameters. Develop/re-define critical specifications criteria for optimum product performance and drive activities to get them to manufacturing process capability. Extract and analyze inline, probe, parametric, reliability, and other critical metrics and predict future behavior of the CMOS device performance of the product to enable early innovative solutions to meet product and device specifications. Early introduction, characterization and validation of new CMOS device models and test structures for developing future NAND products. 3 dimensions analysis with the use of K2 view to extract layout information and combine with the doping profiles of each implant step for product development and integration solutions. Interact and collaborate with TCAD, modeling, and layout teams to drive clearer definition of CMOS device and reliability improvements across multiple tech-nodes and designs. Coordinate activities at manufacturing site towards gating experiment funding, conversions, and effectively communicate decisions made to all R&D, manufacturing, and relevant stakeholders. Take on leadership role at quarterly yield summits and monthly program reviews in summarizing complex problems, deriving and explaining actions taken to address them and getting R&D, manufacturing, and senior management teams on the same page. Assist in the transfer of a new technology from R&D to manufacturing and contribute towards ensuring successful ramp and qualification. Supporting the transfer, documentation and training of module fundamentals into manufacturing.Successful candidates for this position will have:
Minimum of 3-5 years of experience in the semiconductor industry in the areas of Process Integration Device Physics and CMOS engineering. Ability to develop a strong, holistic, end-to-end understanding of CMOS device and its related module on NAND technologies, related structural and electrical fail mechanisms. Knowledge of TCAD, K2 view layout, and architecture of NAND product. Deep understanding of probe failure mechanism, ability to do electrical bench data collection. In-depth knowledge of and direct experience with nonvolatile memories along with good understanding of the NAND process flow, interaction of process & device, common yield and reliability issues is desirable. Exposure to R&D and transfer/manufacturing is desirable. Self-motivated, self-governing with proven ability to work in a demanding and dynamic environment. Ability to coordinate cross-functional teams to achieve a goal. Solid data analysis, communication and reporting abilities with demonstrated presentation abilities. Curiosity and natural tendency of learning new things independently. Ability to travel for extended periods of time to the US for collaborative R&D work.Education :
BS with 5 years of experience, MS with 2 years of experience, or PhD in Electrical Engineering, preferably specialized in Microelectronics and Semiconductor Device Physics.
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