Principal Engineer – Memory Process Pathfinding
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This is a chance to do advanced memory R&D at one of Singapore’s most recognised semiconductor sites. The site’s current fab was the first front-end fab in the world to be recognised by the World Economic Forum as both an Advanced Fourth Industrial Revolution Lighthouse and a Sustainability Lighthouse. The company is also investing about US$7 billion in a new HBM advanced packaging facility, the first of its kind in Singapore, and its future Singapore expansion plans will also support long-term NAND manufacturing.
RESPONSIBILITIES:
Lead the dry etch process roadmap for next-generation NAND, meeting structural, electrical and yield targets
Develop new plasma chemistries, processes and equipment capabilities for future nodes
Manage new, high-performance dry etch chambers
Use data analytics, AI/ML and predictive modelling to speed up process learning and improve etch performance
Work closely with Process Integration, Thin Films, Wet Etch, Diffusion, Lithography, CMP and Device teams
REQUIREMENTS:
Hands-on ICP and/or CCP plasma etch experience in semiconductor process development
Strong grasp of plasma-surface interactions, etch chemistry, profile control and etch equipment
Foundation in plasma physics, materials interactions and process integration
Experience developing and refining dry etch processes for advanced technologies
Familiarity with statistical analysis and process optimisation
Ability to work across multidisciplinary teams
Preferred
PhD or MS with 7 to 10 years in dry etch or process development
High aspect ratio (HAR) etch, pattern transfer, selective etch
ML, predictive or virtual process modelling applied to technology development
Autonomy in a fast-moving R&D setting, strong communication skills
Mentoring or technical project leadership
EA License no: 16S8066 | Reg no.: R1767184
Only successful candidates will be notified.
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