Lead GaN Epitaxy Engineer for Power Switching

Overview Are you passionate about pushing the boundaries of GaN technology? We're looking for a GaN Epitaxy Engineer to take the lead in developing and optimizing GaN-on-Si and GaN-on-Sapphire MOCVD epitaxy processes that power the next generation of energy-efficient devices. In this role, you'll design advanced GaN epitaxial layer stacks and tailor growth...

Your Role Key responsibilities in your new role: Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets Develop and implement new epitaxial processes for advanced wafer products Troubleshoot...

Your Role Key responsibilities in your new role Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets Develop and implement new epitaxial processes for advanced wafer products Troubleshoot...

Lead Process Engineer - GaN Epitaxy (APM), NSTIC GaN 5 days ago Be among the first 25 applicants Get AI-powered advice on this job and more exclusive features. We're seeking a talented and passionate Lead Process Engineer to join our epitaxy team. You'll play a crucial role in developing cutting-edge platform technologies for RF GaN HEMT devices on SiC,...

Description Lead Process Engineer - GaN Epitaxy (APM), NSTIC GaN 5 days ago Be among the first 25 applicants Get AI-powered advice on this job and more exclusive features. We're seeking a talented and passionate Lead Process Engineer to join our epitaxy team. You'll play a crucial role in developing cutting-edge platform technologies for RF GaN HEMT devices...

We're seeking a talented and passionate Lead Process Engineer to join our epitaxy team. You'll play a crucial role in developing cutting-edge platform technologies for RF - GaN HEMT devices on SiC, pushing the boundaries of performance and efficiency.Job Responsibilities: Develop and innovative GaN on SiC HEMT epitaxial processes on an MOCVD system, focusing...

We are on the cusp of a revolution in the field of Gallium Nitride (GaN) technology, and we\'re seeking a visionary GaN Metrology Engineer to lead the charge. As a trailblazer in this domain, you will be responsible for developing and optimising cutting-edge metrology techniques for GaN on Si and GaN on Sapphire material systems. Your expertise will be...

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Salary: Industry Leading Salary Job Type: Permanent - Required skills for the MOCVD Growth Engineer will include;- Strong GaN-on-Si epitaxial growth knowledge - Experience of working within a high volume manufacturing area - Veeco / Aixtron experience desirable - Excellent communications skills - PhD/Masters/BSc Degree in Electrical Engineering/Physics or...