Scientist for Ion Implantation

Scientist for Ion Implantation (APM), IME 1 day ago Be among the first 25 applicants Institute of Microelectronics (IME) is leading an R&D program dedicated to advancing critical process modules for next‐generation device fabrication. The program emphasizes innovation in key areas such as ion implantation – an essential building block for high‐performance devices. This role focuses on developing expertise and leadership in ion implantation process technology, including lattice damage control, channeling effects, and post‐implant recovery. We are seeking an individual with approximately three years of experience in ion implantation. The successful candidate will independently manage ion implantation processes, perform implantation simulations, and apply deep knowledge of crystallography and ion–atom interactions. Strong understanding of implanters, thermal processing physics, beam optics, dosimetry systems, and vacuum technology is essential. The role also requires close collaboration with cross‐functional teams, technology development groups, and customers, and will contribute expertise in compound semiconductor materials to support integration efforts across other process modules. Key Responsibilities Diagnose and troubleshoot: utilize advanced diagnostic tools and software to identify, analyze, and resolve equipment malfunctions, applying a strong understanding of ion implanter system functionality. Process development: support on‐site ion implantation operations by creating, executing, and characterizing implantation recipes for validation, ensuring optimal dopant profiles and superior damage recovery. Vendor collaboration: work closely with equipment vendors to enhance system performance, improve process stability, and minimize tool downtime. Defect analysis: analyze implant‐induced defect formation data to quantify impacts on device performance and develop strategies for defect reduction and process optimization. Operational support: review work orders and coordinate with equipment operators to diagnose and resolve equipment issues, identifying both mechanical and human factors contributing to failures. Experimental design: design and execute ion implantation experiments across a range of doses, energies, tilt, and twist angles to support process innovation and device performance enhancement. Job Requirements M.Sc. or Ph.D. in Electrical Engineering, Materials Science, Physics, or a related field. Minimum of three years of industrial experience in semiconductor device process development or high‐energy ion implantation applications. Strong proficiency in medium‐ to high‐energy/current ion implantation processes, with comprehensive knowledge of implanter systems, subsystems, and troubleshooting methods to minimize equipment downtime. Solid understanding of wide‐bandgap semiconductor materials (e.g., SiC, GaN) and their relevant dopant species. Expertise in ion channelling, ion bombardment, and their impact on implant species profiles. In‐depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors. Familiarity with process simulation (e.g., SRIM/TRIM, Silvaco Athena, Sentaurus Process). Good publication record in semiconductor process or materials science journals. Ability to work collaboratively across multidisciplinary teams (process, metrology, device, modelling). Adept at mentoring and transferring knowledge to junior staff members. Seniority Level Mid‐Senior level Employment Type Full‐time Job Function Research, Analyst, and Information Technology Industries Research Services #J-18808-Ljbffr