Senior/Principal NAND Device Engineer

Senior/Principal NAND Device Engineer page is loaded
Senior/Principal NAND Device Engineer Apply locations MSB, Singapore time type Full time posted on Posted 30+ Days Ago job requisition id JR73372
Our vision is to transform how the world uses information to enrich life for all.
Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing.
As a Senior or Principal NAND Device Engineer in the Device Technology Development group at Singapore site of Micron Technology Inc., you will be responsible for analyzing the cell device characteristics, engineering memory device/array operation, and developing novel solutions for next generation NAND technologies in order to meet the required cell and array performance within project timelines. You will have an exciting opportunity to be front and center in the development of the most cutting-edge NAND technologies and products in the world
Your responsibilities will include, but are not limited to:
Contribute to the device technology development of state of the art NAND cell, in particular by providing expertise in NAND Cell device physics and NAND memory array operation.
Perform electrical characterization of NAND cell arrays and test structures to identify device improvement directions.
Contributing to the cell improvement effort (performance, reliability) by providing feedback to the Process Integration and Cell teams in Singapore and in Boise on process experiments and possible interactions with array operation.
Trim and waveform/algo engineering in order to improve Vt placement, performance and reliability. Utilize first principles device knowledge to develop novel array solutions.
Strong collaboration is required with product engineers and probe engineers.
Requirements:
Successful candidates for this position will have:
Ph.D or Master’s degree in Nanoscience or Electrical engineering with focus on Semiconductor devices
A strong understanding and experience with nonvolatile memories and in particular, NAND device physics.
A strong understanding of semiconductor devices and processes.
Experience with NAND cell optimisation and algo development is preferred.
A strong understanding of statistics.
About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all . With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron and Crucial brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.
To learn more, please visit micron.com/careers
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
To request assistance with the application process and/or for reasonable accommodations,please contact
Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.
Micron does not charge candidates any recruitment fees or unlawfully collect any other